0.50microns Direct Write Gate Lithography for AlGaAs/GaAs Selectively Doped Heterostructure Transistor Devices

The AlGaAs/GaAs selectively doped heterostructure transistor (SDHT) is ideally suited to a submicron recess etch gate process, since the channel of the FET is confined to a two-dimension electron gas, which results in a reduction of short channel effects observed in conventional GaAs MESFETs. Very short propagation delays have been demonstrated previously for submicron direct coupled FET logic circuits.[1]