10 Gbit/s Semi-Insulating Buried Heterostructure Loss-less Reflective Amplified Modulator for Wavelength Agnostic Networks
24 February 2008
We integrated an AlGalnAs modulator-amplifier using semi-insulating buried hetrostructure and selective area growth. The reflective component exhibits insertion gain, operates at 10Gbit/s over 80nm and links bi-directional 10km SMF up to 60degC.