10 GHz optical pulse generation in gain-switched short cavity InGaAsP injection lasers at 1.3micron and 1.5micron.

We report the generation of high-speed optical pulses at 1. 3micron and 1.5micron in short-cavity (60-100microns long) InGaAsP injection lasers by gain-switching. 25 ps pulses with high on/off ratio were obtained at 10.6 GHz from a short-cavity DCPBH InGaAsP semiconductor laser biased at 39mA, three times the threshold current. This is the first report of direct modulation above 10 GHz for InGaAsP lasers.