100 Gb/s operation of an AlGaInAs semi-insulating buried heterojunction EML
22 March 2009
A large electro-optic bandwidth Electro-absorption Modulated laser, with a Semi-Insulating AlGaInAs/InP Buried Heterostructure, has been associated with a 100 Gb/s InP Heterojunction Bipolar Transistor Multiplexing circuit, exhibiting an open eye diagram.