1.3microns InGaAsP index guided multi-rib waveguide laser array.

Phase locked InGaAsP index guided multi-rib waveguide laser arrays emitting at 1.3microns have been fabricated. These devices have threshold currents in the range 400-500mA at 30C and have been operated to ulsed output as high as 400mW. More than 100mW of output power has been obtained up to an ambient temperature of 60 C. The lasers emit in multilongitudinal modes with a far field divergence of 20 degrees x 40 degrees.