1.5microns GaInAsP Planer Buried Heterostructure Lasers Grown Using Chemical Beam Epitaxial Base Structures.

GaInAsP/InP double-heterostructures grown by chemical beam epitaxy have been used in conjunction with liquid phase epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5microns. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and in general linear output power up to ~ 10 mW/facet. The 3dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heat-sink stud. The relative intensity noise is low,