1.9 &μm hybrid silicon/III-V semiconductor laser

We report the first 1.9 &μm hybrid silicon/III-V laser based on a wafer bonding technique. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator (SOI) wafer with processed silicon waveguides and transition tapers. We demonstrate laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C.