1/F Noise in Organic Thin-Film Transistors

We present measurements of 1/f noise in thin film transistors manufactured from a novel class of organic materials. Various n-channel and p-channel devices are studied in the frequency range of 1Hz - 10 kHz. The drain current noise is found to vary proportionally with drain current. The bias and gate length dependence of the drain current noise is found to be well described by a phenomenological model used for Si-MOSFETs. The noise level is compared to that measured in Si-MOSFETs, and the usability of organic transistors for low frequency circuits is discussed.