1/f Resistance Noise due to the Motion of Hydrogen in Pd and Amorphous a-Pd sub (80) Si sub (20)

Time-dependent resistance fluctuations with an approximately 1/f frequency dependence are observed in most semiconducting devices, and also in most small (lithographically-patterned films) metal conductors. The origin of the 1/f noise in metal films is suspected to be thermally-activated motion of atomic-sized electron scatterers in the metallic lattice. These movements in time can modulate the sample resistance R if R is a function of the scatterer local positions.