2.2micron GaInAsSb/AlGaAsSb Injection Lasers with Low Threshold Current Density.

Double heterostructure 2.2micron wavelength lasers were fabricated from Ga sub(0.84)In sub(0.16)As sub(0.15)Sb sub(0.85)/Al sub x Ga sub(l-x) As sub(0.04) Sb sub(0.96) wafers grown by liquid phase epitaxy. These structures were grown with Al-rich confinement layers (x = 0.4) for optical confinement and thin intermediate cladding layers (x = 0.34) to relieve the strain resulting from the lattice-mismatch of the Al-rich confinement layers with respect to the substrate and the active layer. A threshold current density as low as 1.7 ka/cm sup 2 was obtained at room temperature.