2D Hole Systems in Fully Field Effect Controlled Heterostructures

Using a basic heterostructure design with appropriate contacts diffused to the AlGaAs/GaAs interface, a 2D high mobility hole channel can be populated through field effect using a simple layered top gate structure. This structure incorporates lithographically defined contacts overlayed by both an insulating layer and top-gate, allowing hole density modulation via the top-gate bias. High mobility transport is observed in these devices, exposing clearly resolvable quantum Hall states at high magnetic fields.