30 GHz Fully Packaged Modified Uni-Traveling Carrier Photodiodes for High-Power Applications

High-speed photodetectors with large saturation photocurrent are key components in fiber optic links and photonic microwave applications. Recently, we demonstrated flip-chip bonded modified uni-traveling carrier photodiodes (MUTC PDs) that achieved high saturation current and high speed [1]. In the present work, similar MUTC PDs were fully packaged and characterized under high-power large-signal modulation conditions. The fabricated devices achieve very high RF output power levels and are suitable to detect 42 Gbit/s data streams with Vp-p as high as 2.4 V.