3D simulations and characterization of Multi-Finger InP DHBTs

This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation of devices up to 8 fingers. The 1D temperature profile was then used to compute the average thermal resistance of the multifinger devices. The comparison with the corresponding results obtained by electrical measurements show a good agreement. The temperature profiles from several simulations are used to extract the thermal resistance matrix used in the electro-thermal coupling of the compact large-signal model.