3V GSM Base Station RF Receivers Using 0.25 micron BiCMOS

This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using 0.25 micron BiCMOS process. This is the first silicon-integrated radio front end that can be used to meet GSM normal and micro base station specifications reported to date. Noise figure, Gain and Output IP3 are 2.1 dB, 25.8 dB and 25.7 dBm for GSM9000 and 3.3 dB, 21.3 dB and 22.5 dBm for DCS1800, respectively.