40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology
04 August 2005
A circuit-oriented InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) technology has been developed, and used to fabricate a 40 Gbit/s full-rate digital circuit (a 40 GHz-clocked D-FF). The high yield achieved demonstrates the whole process (epitaxy, technology) quality.