40 Gb/s Colorless Reflective Amplified Modulator
15 February 2013
In this letter we demonstrate a colorless Reflective Amplified Modulator operating within the C- and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtained a stable, open eye performance of the device at the temperature till 85ºC. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth and low-parasitic RC semiinsulating buried heterostructures.