40-Ps Photoconductive Response Times in Single Crystal InP:Fe and InAsP:Fe Layers Grown by Hydride Vapor Phase Epitaxy
11 January 1989
Response times of 40-ps have been demonstrated in high Fe concentration (5 x 10 sup 18 cm sup -3 ) epitaxial layers of InP:Fe using pulsed- bias photoconductive sampling without radiation-damage or spurious contact effects.