A 0.16 μ modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs
01 January 1999
A 0.16 μm modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f T=45 GHz and BVCEO=4.0 V. With a fTBV CEO product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost