A 1.3micron InP/InGaAsP Channeled-Substrate buried Heterostructure laser monolithically integrated with a photodetector.
01 January 1985
A 1.3micron InP/InGaAsP Channeled-Substrate buried Heterostructure laser is monolithically integrated with a monitoring photodetector. The lasers have threshold currents in the range of 25-35mA and the photodetector provides ~15 muA of photocurrent per mW of laser power.