A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
01 January 2011
In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25 nm and a collector layer of 130 nm. The emitter width of the transistor is 0.35 μm and the base contact is 0.3 μm wide. The base and emitter contacts present an excellent contact resistivity. The current gain of the 0.35×5μm2 transistor is equal to 21 and the breakdown voltage is equal to 4 V. The current gain cut-off frequency and the unilateral gain cut-off frequency are over 300 GHz and 380 GHz respectively. The transistor is fabricated in an industrial environment at OMMIC foundry.
