A 36-80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a 0. 18 ìm SiGe BiCMOS technology. Inductive degenerations are used extensively in this LNA design to improve the linearity. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a broad 3 dB bandwidth of 14.5 GHz from 69 GHz to 83.5 GHz. The measured NF is 7.4 dB at 75 GHz and is less than 8 dB from 64 GHz to 75 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz. The circuit has a low power consumption of 37 mW.