A 4 Gbits/s GaAs MESFET laser-driver IC.
01 January 1986
A high speed laser-driver IC has been fabricated using etched- gate, enhancement/depletion mode MESFET technology. It has been demonstrated that the device is capable of driving 25 ohm load with 80 mA modulation current at up to 4 Gbits/s NRZ data rate.