A 50-nm Vertical Replacement-Gate (VRG) pMOSFETs

We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promises as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping byb ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths of 100 nm and below. Since both sides of the device pillar drive in parallel, the drive current per microns of coded width can far exceed that of planar MOSFETs. Our 100 nm VRG-pMOSFETs with t sub (ox) = 25angstroms drive 615 muA/micron at 1.5 V with I sub (off) = 8 nA/microns - 80% more drive than specified in the 1999 ITRS Roadmap at t he same I sub (off). We demonstrate 50 nm VRG-pMOSFETs with t sub (ox) = 25angstroms that approach the 1.0 V roadmap target of I sub (on) = 350 muA/micron at I sub (off) = 20 nA/micron without the need for a hyperthin (