A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology
23 January 2008
A broadband millimeter-wave low-noise amplifier (LNA) operating at V-band (50 GHz to 75 GHz) is presented. The circuit is fabricated with 0.18 mum SiGe BiCMOS technology. The matching networks are synthesized with microstrip transmission lines. The LNA achieves a maximum transducer power gain |S21| of ~16 dB, a noise figure of 6.8 dB at 62 GHz, and a 3-dB bandwidth from 54 GHz to 70 GHz. The output return loss is better than 12 dB from 59 GHz to 72 GHz. The reverse isolation |S12| is better than 40 dB over the 3-dB bandwidth. The LNA draws 9.6 mA from a 2.5 V supply.