Skip to main content

A Broadband Parallel Doherty Power Amplifier for Wireless Applications

01 October 2012

New Image

In this paper, a novel dual-band transmission-line parallel Doherty amplifier architecture for active antenna arrays and base station applications in next generation communication systems is presented. The carrier and peaking amplifiers using GaN HEMT devices CGH40010P are designed based on the reactance compensation technique to provide optimum Class-E impedance seen by the device output at the fundamental frequency across the wide frequency range achieving the drain efficiencies over 73% across the frequency range from 1.7 GHz to 2.7 GHz. In a single-carrier WCDMA operation mode with a PAR of 6.5 dB, high drain efficiencies of 40-45% can be achieved at an average output power of 39 dBm with an ACLR1 of about -30 dBc at center bandwidth frequencies of 2.14 GHz and 2.655 GHz.