A Comparison of Batch and Single Wafer High Dose Arsenic Ion Implantation Techniques.
01 January 1989
High dose, low energy (4x10 sup 15 cm sup -2 at 15 KeV ) arsenic ion implantation into silicon was performed in batch and single wafer mode using medium and high current ion implanters. An investigation of implanted and annealed samples by Rutherford Backscattering (RBS), Transmission Electron Microscopy (TEM), Thermal wave technique and sheet resistance mapping showed little to no difference of arsenic profiles and residual damage between batch and single wafer implantation conditions when sample temperature during implantation was kept below 120C.