A comparison of CdTe grown on GaAs by molecular beam and organometallic vapor phase epitaxy.

CdTe has been grown on (100) GaAs by molecular beam epitaxy (MBE), organometallic vapor phase epitaxy (OMVPE), and photo- assisted OMVPE (POMVPE). Optimum conditions for OMVPE are governed by the thermodynamics of the Cd-Te system. The conditions for growing (100) or (111) material for each technique are presented. (111) growth is shown to proceed via the formation of a relatively Te-poor Ga-As-Te surface phase. Surface treatments which result in different surface structures and yield (100) growth are presented.