A criterion for the determination of upper critical fields in highly disordered thin film superconductors.
01 January 1984
A procedure is described by which the temperature-dependent upper critical field H(c2)(T) in highly disordered thin film superconductors with broad resistive transitions is determined. Resistance versus perpendicular magnetic field isotherms are used in conjunction with the mean field transition temperature T(c0), derived from Aslamazov-Larkin fits to the zero-field resistive transition, to determine H(c2)(T).