A DC - 2Gb/s silicon NMOS laser driver: A 5V, 100mA power driver.
01 January 1986
This paper describes a laser modulation circuit fabricated in a 1.5micron design rule, 1micron effective gate length NMOS process using UV lithography. The circuit, intended for application in optical communications, has been tested to a maximum operating speed of 2Gb/s with zero data error output levels in excess of 100mA and 5V.