A dislocation model relating apparent charge density to lattice mismatch in epitaxial InGaAs/InP.

Using a new model relating dislocation charge to Fermi level, we have simulated the differential capacitance resulting from the inclined dislocations accompanying the misfit dislocations in epitaxial InGaAs/InP samples. The result is a quadric dependence of charge upon mismatch which is in quantitative agreement with experiments of Macrander, et al. for a misfit dislocation segment length equal to about nine times the dislocation spacing.