A Double Heterostructure Opto-Electronic Switch as a Single Quantum Well Laser
01 January 1990
The Double Heterostructure Opto-Electronic Switch is demonstrated as an N-channel, single quantum well, graded index laser structure. As a broad area device, the DOES exhibits excellent electrical switching characteristics of 12V and .04 A cm sup (-2) at the switching condition and 1.8V and 3.3 A cm sup (-2) at the holding condition with 8.4 x 10 sup (-4) ohm cm sup (-2) on state resistance. As a laser, threshold current densities down to 580 A/cm sup 2, loss of 11 cm sup (-1), slope efficiency of 0.4 ma/mw and total power conversion efficiency of 45% were obtained.