A Field Assisted Bonding Process for Silicon Dielectric Isolation

We havew developed a technique for bonding together two oxidized silicon wafers, resulting in a Si/SO sub 2 /Si structure. The process consists of applying a moderate voltage between the wafers at a temperature of 1100 to 1200C. Under these conditions, 3 inch device wafers form a uniform, microscopically defect-free bond over their entire area.