A folded-extended-window MOS FET for VLSI application.

A novel, simple and straightforward technology, FEWMOS for high packing density LDD CMOS device, is described. A salicide polysilicon layer is used as a window-pad for window etch stop, source/drain diffusion source, and as an extra sub-level interconnection layer. The reductions of layout area in transistor and in many applications including memory and ASIC are significant.