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    A High-Performance Directly Insertable Self-Aligned Ultra-Rad-Hard and Enhanced Isolation Field-Oxide Technology for Gigahertz Silicon NMOS/CMOS VLSI

A High-Performance Directly Insertable Self-Aligned Ultra-Rad-Hard and Enhanced Isolation Field-Oxide Technology for Gigahertz Silicon NMOS/CMOS VLSI

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In small and large geometry high performance radiation-tolerant CMOS/NMOS circuits, the parasitic field oxide transistor leakage can be fatal for the circuit operation. We describe a new field oxide structure for Rad-Hard NMOS/CMOS VLSI.