A High-Performance Directly Insertable Self-Aligned Ultra-Radiation-Hard and Enhanced Isolation Field-Oxide Technology for Gigahertz Si-CMOS VLSI

In small geometry high performance radiation-tolerant CMOS/NMOS circuits, the parasitic field oxide transistor leakage can be fatal for the circuit operation. We describe a new field oxide structure for Rad-Hard CMOS VLSI. This is a three layer structure consisting of a thin thermal oxide, a doped polysilicon sheet deposited on the thin oxide and a thick CVD oxide layer deposited on the polysilicon.