A High Performance, Fully Implanted, Depletion Mode InP JFET

A fully ion-implanted, planar InP JFET has been developed that exhibits high transconductance, low leakage and low pinchoff voltage. A shallow abrupt junction is made by coimplantation of As and Be into a Si-implanted channel layer. Another Si implant is performed to form highly doped source and drain, thus reducing FET series resistance. The selective implants are then activated by a rapid thermal process using Al sub 2 O sub 3 As a capping layer.