A High-Performance Submicron Twin-Tub V Technology for Custom VLSI Application

A fifth-generation, high performance twin-tub, two-level metal, submicron CMOS technology has been developed for 5 V custom VLSI applications. This t technology utilizes fabrication techniques of high pressure oxidation (HIPOX) [1], lightly doped drain (LDD) for both N and P channels, titanium self-aligned silicide (SALICIDE), and plasma-enhanced low temperature oxide for inter-metal dielectric. This paper will briefly review the front-end process, but elaborate techniques involved in titanium silicide formation, the two level metal process, and the temperature sensitivity of device parameters. In addition, high performance circuits are demonstrated by the application of this technology.