A microwave GaAsFET power module with GaAs matching circuits - The M-FET (Matched FET).

A new approach to designing microwave amplifier modules is presented. It allows individual optimization of devices for high power or efficiency and is economical of development time while retaining most of the advantages of monolithic integration. The technique incorporates separate GaAs matching chips and GaAsFETs within a small hermetic package. The matching circuits are 3-level (metal - silicon nitride - metal) structures on semi-insulating GaAs, thinned to 100 microns, with gold plated backs and via connections to the capacitor bottom electrodes. An initially high failure rate among the capacitors was traced to rough edges on the bottom electrodes and to electrostatic discharge damage.