A model for the formation of subboundaries in recrystallized Si on SiO(2).

A new model for the formation of the subboundaries is developed based on two fundamental physical properties of a thin Si film solidifying between two fairly rigid layers of SiO(2). These are; (1) the large difference between thermal conductivities of Si and SiO(2), and (2) the expansion of Si upon solidification.