A Model for the Surface Chemical Kinetics of GaAs Deposition by Chemical Beam Epitaxy (CBE)
09 September 1987
Recently we have reported the measurement of RHEED intensity oscillations during Chemical Beam Epitaxy (CBE) of GaAs using triethylgallium (TEG) and As sub 2 derived from an arsine cracker (Appl. Phys. Lett. 50(19), May 11, 1987).