A monolithically integrated 1-Gb/s optical receiver in 1-mu m CMOS technology

Results of a monolithically integrated optical silicon receiver for applications in optical data transmission and in optical interconnects with wavelengths of 638 and 850 nm are presented. The optoelectronic integrated circuit (OEIC) implementing a vertical p-type-intrinsic-n-type photodiode achieves a data rate of I Gb/s for 638 nm with a sensitivity of -15.4 dBm at a bit-error rate of 10(-9). The sensitivity of this OEIC in a 1.0-mum CMOS technology is improved by at least a factor of four compared to that of published submicrometer OEICs. A 25-THz.Ohm effective transimpedance bandwidth product of the implemented amplifier is achieved.