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    A Monte Carlo Simulation of Electron Beam Lithography Used in Create 0.5micron Structures on GaAs

A Monte Carlo Simulation of Electron Beam Lithography Used in Create 0.5micron Structures on GaAs

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We have used a positive trilevel resist structure on GaAs to verify our general purpose Monte Carlo calculations of electron beam lithography. The trilevel resist system consists of EBR-9 as the imaging electron beam resist, germanium as the intermediate level and PMGI as the bottom resist.[1] We have used a single scattering model to simulate the electron-solid interactions.