A Neural Network Approach to Proximity Effect Corrections in Electron Beam Lithography.

The proximity effect, caused by electron beam backscattering during resist exposure, is an important concern in writing submicron features. It can be compensated by appropriate local changes in the incident beam dose, but computation of the optimal correction usually requires a prohibitively long time. We present an example of such a computation on a small test pattern, which we performed by an iterative method.