A New 10 um Infrared Detector Using Intersubband Absorption in Resonant Tunneling GaAlAs Superlattices
16 March 1987
The fabrication of 10 um infrared detectors from III-V materials allows advantageous use of their more highly developed growth and processing technologies, as compared with II-VI compounds. We demonstrate for the first time, a novel 10.8 um superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs.