A new heterostructure junction field effect transistor (HJFET).
01 January 1986
A new type of heterostructure junction field effect transistor is proposed suitable for realization in a heterojunction material combination such as AlGaAs-GaAs. The conducting region is a layer which is pinched off by the modulation of a unique n-n heterojunction. The device structure requires molecular beam epitaxial growth techniques and relies on ion implantation for threshold control.