A new high-power, narrow-beam transverse-mode stabilized semiconductor laser at 1.5micron: The heteroepitaxial ridge-overgrown laser.
01 January 1984
We proposed and demonstrated the operation of a new laser structure: the Heteroepitaxial Ridge-Overgrown (HRO) laser. The laser growth involves two simple epitaxial growths with ridge overgrowths through an oxide defined stripe to form the strip loaded waveguide of the laser with automatic alignment of the current confinement through the stripe.