A Novel, Aerosol-Nanocrystal Floating-Gate Device for Non-Volatile Memory Applications

This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device is characterized by program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>10 sup 5 P/E cycles), and long-term non-volatility in spite of its thin bottom oxide (55-60angstroms). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.