A Novel Discharge Source Applied to Submicron Polysilicon Etching.

We have demonstrated that an intense discharge can be sustained at low pressure (~ 1.7:1, respectively, in a 75 W discharge using 0.1 mtorr Cl sub 2 and 1% O sub 2. Anisotropic profiles of 0.25microns lines were obtained across 100 mm wafers with minimal line width loss. These experiments show that RF resonator discharges may offer an alternative to discharges based on electron cyclotron resonance.