A novel etch mask process for the etching of (011) oriented v-grooves in InP(100) for CSBH laser growth.

A new photoresist etch mask process has been developed for the etching of v-grooves in InP(001) for channelled substrate laser growth. LPE layers have been grown on these wafers and the devices' performance and reliability are comparable with the wafers etched with SiO(2) etch mask. The deterioration of the etching solution and the resist mask have been studied. This process reduces the etch mask process from 6 to 12 steps.