A novel technique to determine hetero-surface diffusion in semiconductor systems.
01 January 1988
Surface diffusion is of importance in a variety of surface related processes. In this paper we discuss the evaluation of surface diffusion coefficients from ion scattering measurements of cluster growth processes. Values of the surface diffusion coefficient are extracted for the cases of Sn/Si(100), Sn/Si (111), Ga/Si(100), Ga/Si(111) and Ga on As terminated Si(111).